抄録
The manufacturing processes of a through silicon via for three-dimensional integration are complex, with each process requiring a high yield. In this study, the filling state of electroplating copper was investigated using the scanning-laser-beam-induced current method. After reactive etching of via holes with diameters ranging from 50 μm to 150 μm, a copper seed layer was deposited by sputtering, which then enabled the electroplating of copper. An infrared laser beam with a wavelength of 1,064 nm scanned upwards from the back surface of a sample, and the induced current between the copper layer and silicon back surface was measured to obtain the current image. By changing the focal point of the laser beam, the copper filling state of the through silicon via was analyzed non-destructively in the direction of depth.
