Transactions of The Japan Institute of Electronics Packaging
Online ISSN : 1884-8028
Print ISSN : 1883-3365
ISSN-L : 1883-3365
Technical Papers
Thermal Properties of Power Si MOSFET by Considering Electron - Phonon Scattering Using Monte Carlo Simulation
Risako KibushiTomoyuki HatakeyamaShinji NakagawaMasaru Ishizuka
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2015 Volume 8 Issue 1 Pages 55-61

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Abstract

This paper describes the effect of variation of energy relaxation time on calculation results of Electro-Thermal Analysis. In our previous study, we investigated properties of the power Si MOSFET (Metal - Oxide - Semiconductor Field-Effect Transistor) with Electro-Thermal Analysis. In the previous study, energy relaxation time τE was assumed to be 0.3 ps, which is generally used in calculations of semiconductor devices. Then, in this paper, to investigate more accurate thermal properties of the power Si MOSFET, variation of τE is considered as a function of carrier energy in Electro-Thermal Analysis. First, for creating the function, we obtain variation of τE with Monte-Carlo Simulation. Then, we perform Electro-Thermal Analysis with the function. The calculation results are compared with our previous calculations, and we investigate the effect of variation of τE on calculation results in Electro-Thermal Analysis. From this calculation, even if the variation of τE is considered in Electro-Thermal Analysis, the effect is not so large.

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© 2015 The Japan Institute of Electronics Packaging
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