1050アルミニウム熱間圧延材の回復・再結晶速度に及ぼす焼なまし時の不純物析出の影響

抄録

It is well known that the recovery and recrystallization of pure aluminum are influenced by the dissolved impurities, iron and silicon. In this study, we assumed that the dissolved impurities precipitate on the cell boundaries and subgrain ones during annealing and control the rate of recovery and recrystallization in the pure aluminum and adopted a new rate equation developed by Yamamoto, which contains the term of particle number that exponentially changes. It was found that the entire reaction was divided into two reactions, i.e., the recovery process and recrystallization one analyzed by this equation. The entire reaction was expressed by superimposing the two processes. In the recovery process, the value of the time exponent is 0.5, which means the control of the dislocation pipe diffusion, by which impurities precipitate on the dislocation cell boundaries. For the recrystallization process, the value of the time exponent is 1, which means the control of the grain boundary diffusion, by which impurities precipitate on the subgrain boundaries. Therefore, our assumption was verified by this new equation. From the activation energy, we consider that the precipitation of silicon during the recovery process and that of iron during the recrystallization one control the reaction rate.