巻号一覧
64 巻, 7 号
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研究論文
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浅野 峰生, 中村 拓郎, 吉田 英雄原稿種別: 研究論文
2014 年 64 巻 7 号 p. 279-284
発行日: 2014/07/30
公開日: 2014/08/30
ジャーナル フリーIt has been reported that the elongation of the 1050-H26 sheet annealed at 200°C is lower than that of the 1050-H18 sheet. In this study, the effect of the annealing time at 250°C on the elongation of 1200 aluminum sheets was investigated, and the cause of the low elongation was discussed by observing the change in the microstructures before and after tensile deformation. The elongation of the samples annealed at 250°C for less than 50 min was below 1%, and this elongation was lower than the elongation of the as-rolled and the annealed ones at 250°C for more than 150 min. In the samples annealed for a short time, the subgrains with a diameter of about 0.5–2 µm formed, and Fe and Si, which were a solid solution, became segregated at the sub-boundaries. These samples were locally deformed in a stress concentrated area during the deformation, and there was no significant increase in the dislocation density near the fracture part after the deformation. The cause of the low elongation was considered to be due to the dynamic recovery that locally occurred in a stress concentrated area during the deformation, because dislocations introduced into the subgrains by the deformation easily moved to the sub-boundaries due to the low solute levels within the subgrains.抄録全体を表示PDF形式でダウンロード (6948K) -
吉田 英雄, 大久保 喜正原稿種別: 研究論文
2014 年 64 巻 7 号 p. 285-291
発行日: 2014/07/30
公開日: 2014/08/30
ジャーナル フリーIt is well known that the recovery and recrystallization of pure aluminum are influenced by the dissolved impurities, iron and silicon. In this study, we assumed that the dissolved impurities precipitate on the cell boundaries and subgrain ones during annealing and control the rate of recovery and recrystallization in the pure aluminum and adopted a new rate equation developed by Yamamoto, which contains the term of particle number that exponentially changes. It was found that the entire reaction was divided into two reactions, i.e., the recovery process and recrystallization one analyzed by this equation. The entire reaction was expressed by superimposing the two processes. In the recovery process, the value of the time exponent is 0.5, which means the control of the dislocation pipe diffusion, by which impurities precipitate on the dislocation cell boundaries. For the recrystallization process, the value of the time exponent is 1, which means the control of the grain boundary diffusion, by which impurities precipitate on the subgrain boundaries. Therefore, our assumption was verified by this new equation. From the activation energy, we consider that the precipitation of silicon during the recovery process and that of iron during the recrystallization one control the reaction rate.抄録全体を表示PDF形式でダウンロード (3041K)
解説
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吉田 健吾原稿種別: 解説
2014 年 64 巻 7 号 p. 293-300
発行日: 2014/07/30
公開日: 2014/10/30
ジャーナル フリーPDF形式でダウンロード (3901K)
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