Abstract
The interfacial reaction of single crystal of α-SiC with molten aluminum and Al-Si alloys has been studied. The influence of silicon content in the melt on the growth of Al4C3 and an epitaxial relation between SiC and Al4C3 in the interfacial reaction have also been investigated by SEM observation. In aluminum of 99.99 mass% purity at 1273K, Al4C3 phase formed in random orientation to the SiC (0001) plane, however, the relation of SiC (1010)//Al4C3 (1010) and SiC (1120)//Al4C3 (1120) was found. The epitaxial growth of SiC (0001)//Al4C3 (0001) was promoted in the melt containing Silicon. Silicon in the aluminum melt inhibited the interfacial reaction. Al4C3 crystal grew preferentialy along the c axis in the Silicon containg melt. The growth of Al4C3 by the interfacial reaction between SiC and aluminum occurs as follows: at first SiC is etched by the melt and then Si and C atoms diffuse to the melt. Finally Al4C3 crystals nucleate and grow on the SiC crystals from the melt supersaturated with carbon. As the result, hexagonal pyramid of SiC formed at the interface between SiC (0001) planeand Al4C3 on the epitaxial growth.
