Fe/MgO/GaAs/MgO/Fe 構造における磁気抵抗効果

抄録

  We investigated the structure and magnetoresistance effect for the Fe/MgO/GaAs/MgO/Fe junctions. The junctions were deposited on MgO(001) single crystal substrate by Molecular Beam Epitaxy. RHEED patterns and XRD pole profiles reveal that bottom electrodes, Fe, and inter layers, n-GaAs, grow epitaxially. While RHEED patterns reveal that upper electrodes, Fe, grow in a polycrystal form. The junctions exhibit magnetoresistance ratio of 3.2% at room temperature. The magnetoresistance curves correspond to the magnetization alignment between the bottom and the upper Fe electrodes. These results indicate that the magnetoresistance effect originates from spin injection from Fe to GaAs through MgO barriers.