Journal of the Japan Institute of Metals and Materials
Online ISSN : 1880-6880
Print ISSN : 0021-4876
ISSN-L : 0021-4876
Ar, Xe Ion Bombardment Effects on Film Characteristics of Ni Thin Film during Sputter Deposition Process
Ami KohriFumihiko HayashidaYoshiaki ShinoharaYoshihito Matsumura
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2012 Volume 76 Issue 5 Pages 355-358

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Abstract
  Previously, as a means of expressing the effect of ion bombardment, we proposed an ion bombardment parameter Pi based on the magnitude of the ion momentum and impingement ratio of Ar ions to metal particles. As a result the internal stress of the ferromagnetic films can be controlled by ion bombardment parameter Pi. In this study, molecular mass effects with various sputtering gases such as Ar and Xe on magnetic thin films are quantitatively discussed with ion bombardment parameter Pi. The Ni thin films were prepared by the D.C. magnetron sputtering process. Sputtering gases were using Argon (Ar) and Xenon (Xe). Plasma diagnostics was carried out by single Langmuir-probe during the sputter deposition. The internal stress of the films varies linearly with ion bombardment parameter Pi, regardless of the sputtering gas species. In addition, the magnetostrictive susceptibility of the film is also dependent on Pi. Internal stress and magnetostrictive properties of Ni thin films could be controlled with ion bombardment parameter Pi.
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© 2012 The Japan Institute of Metals and Materials
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