四塩化珪素のクロムに対する反応
1960 年 24 巻 2 号 p. 78-82
詳細
1960 年 24 巻 2 号 p. 78-82
The conditions of formation of silicides, when chromium powder or mixed powders of chromium and silicon were reacted with silicon tetrachloride gas in hydrogen, argon and nitrogen atmospheres at 800°C to 1300°C, were examined by weight changes and X-ray analysis. In hydrogen and argon atmosphere, the chromium silicides were easily produced. On the other hand, in nitrogen atmosphere, X-ray analysis showed the formation of chromium nitrides other than chromium silicides below 1000°C, and showed alone the formation of silicon nitride higher than 1200°C. A mechanism of formation of silicon nitride, when chromium powder was reacted with silicon tetrachloride in nitrogen atmosphere, was discussed.
