一方向性珪素鋼板のGoss 2次再結晶形成メカニズム

抄録

Mechanism of secondary recrystallization in grain oriented silicon steel processed both with one-stage and two-stage cold rolling methods has been investigated using materials containing MnS alone or MnS and AlN as inhibitors.
(1) In the one-stage cold rolling method, the Goss orientation has the specifically high intensity of Σ9 orientations in a primary recrystallized matrix. When AlN and MnS are used as inhibitors, the Goss orientation grows preferentially consuming grains with Σ9 orientation while other grains remain inhibited resulting in the Goss secondary recrystallization.
When only MnS is used as an inhibitor, no secondary recrystallization occurred due to the poor inhibitor effect of MnS.
(2) In the two-stage cold rolling method, the Goss secondary recrystallization evolves regardless of the inhibitors used. The required intensity level of the inhibitors for the secondary recrystallization in the two-stage cold rolling method is relatively low compared with that of the one-stage cold rolling method.
The intensity of Σ9 orientation in relation to the Goss orientation is not the highest among other orientations, but the intensity of the Goss orientation itself has a peak value in a primary recrystallized matrix. Therefore, the P_CNΣ9 value, a product of the intensity of Goss orientation and the intensity of Σ9 orientation in the primary matrix, is the highest except for the orientations having very high intensity of Σ1 orientations. The occurrence of the Goss secondary recrystallization in the two-stage cold rolling method is considered to be determined by the P_CNΣ9 value as this value is associated with a probability of a Goss grain coming into contact with a grains of Σ9 orientation.