銅結晶粒界におけるArバブルの生成と成長
1994 年 58 巻 6 号 p. 585-590
詳細
1994 年 58 巻 6 号 p. 585-590
Bubble formation and growth on grain boundaries under Ar ion implantation were investigated using Cu bicrystals which have symmetric [0, 1, 1] tilt boundaries. Density and growth rate of bubbles increase with grain boundary (GB) energy which is determined from the lenticular shape of bubbles on the grain boundary. These results show that the fluence of Ar as solutes into GB increases with GB energy increase, because the solute is easy to precipitate on high energy GB. On the other hand point defect inflow to the GB does not depend on GB energy. The origin of the difference of these phenomena between solutes and point defects is thought to be as follows: Solute atoms remain on the GB but point defects disappear when they are absorbed on the GB.
