α-SiC/Cu間の特異濡れ反応により形成された界面組織
1995 年 59 巻 12 号 p. 1292-1298
詳細
1995 年 59 巻 12 号 p. 1292-1298
The interface microstructure and peculiar wetting phenomena observed in the α-SiC single crystal and liquid Cu reaction system has been examined. α-SiC decomposes into Si and C in contact with Cu liquid at 1100°C. Si dissolves in Cu liquid and no silicide was observed. C forms fine grains of glassy carbon. The reaction layer is deeply formed into the α-SiC side. A specific orientation relationship was found between α-SiC and Cu as following.
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oindentThe hexagonal spreading of Cu on α-SiC single crystal is caused by fine hexagonal pits formed on the surface of α-SiC.
