活性化反応性蒸着法(ARE)によるTi-Al-N系皮膜の形成
1998 年 62 巻 1 号 p. 98-105
詳細
1998 年 62 巻 1 号 p. 98-105
Ti-Al-N films were deposited using an activated reactive evaporation (ARE) method with single vapor source of Ti-Al alloys. The behavior of some species excited and ionized in the plasma and a relationship between these reacting species and important operating parameters of ARE such as a probe voltage were investigated by optical emission spectroscopy(OES) and mass spectrometry(MS). The films were characterized by XRD, EPMA and AES. A high temperature oxidation of Ti-Al-N films were studied in air at temperatures from 600 to 1000°C. The results were summarized as follows.
(1) Each of emission lines from titanium, aluminum and nitrogen by OES could be detected without interferences.
(2) Since TiN+ was observed by MS during TiN and Ti-Al-N film formation, TiN was considered to be synthesized in the plasma.
(3) The Ti/Al ratios of Ti-Al-N films analyzed by EPMA showed a good correlation to the Ti/Al ratios monitored by OES and MS respectively.
(4) The resistivity to oxidation of Ti-Al-N films increased with increasing Al content in the films.
