Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Present status and issues of Si single crystal
Hideki Tsuya
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1997 Volume 24 Issue 2 Pages 96-

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Abstract
Silicon crystal technology is now in a big revolution era.Present status and issues of Si single crystals for subquarter micron devices are discussed in terms of grown in defects,epitaxial growth, 300mm and SOl.
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© 1997 The Japanese Association for Crystal Growth
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