Abstract
We analyzed the structure of octahedral voids in the bulk of standard silicon wafers. They are often twin type and are about 100 nm in size.The structure of the defect is incompletely octahedron. and is mainly surrounded by{111}planes.Electron diffraction and energy-dispersive Xray spectroscopy analyses suggest that the octahedron defect is void.A 2nm-thick layer exists on each of the side walls of the void defect. Auger electron spectroscopy analysis suggests that the 2nm-thick layer is Si02.
