抄録
We investigated the Czochralski growth of uGa0_2 single crystal for use as a substrate for the epitaxial growth of hexagonal GaN. We fbund that [001] pulling provides the crystal with a multi-polar domain, while [010] and/or [100] pulling results in the crystal with a single-polar domain. GaN thin film grew only on the hardly etched suface of(001) LiGa0_2 substrate with a single polar domain.
