抄録
A chemical equilibrium model is applied to the MBE growih of InN, GaN and ALN semiconductors using atomic nitrogen source. The equilibrium partial pressure and the growih rate are calculated. The phase diagram of the deposition indicating etching, droplet and growih regions is computed for the growth. In addition, the interactive phase diagram system, which provides thermodynamic information on the growth conditions for every crystal-growers,is shown.
