Abstract
The In_x Ga_<1-x>As(x=0.06)layers were grown on siN_x-masked GaAs(111)B substrates with trenches of 1 mmo in diameter and 20-50μm in depth by liquid Phase epitaxial method. In the case of trench of more than 40μm in depth, the InGaAS layer made a bridge over a trench as well as laterally grew on the SiN_x film. As the grown layer did not contact the substrate except the trench periphery, high quality layers were grown.
