Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Single crystal growth of LiGaO_2 as a substrate for GaN thin film growth
T. IshiiM. MukaidaS. MiyazawaT. NishiharaS. HayashiM. Shinohara
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JOURNAL FREE ACCESS

1998 Volume 25 Issue 3 Pages A9-

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Abstract
We investigated surface atoms of LiGaO_2 (001) substrate with a single domain structure by CAICISS and found that the atoms of easily etched surface are oxygen and those of hardly etched one are metal(Li,Ga). This relationship is well explained by the surface bonding model of ZnO proposed by Mariano. GaN thin film grew only on the metal surface of LiGaO_2 (001) substrate.
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© 1998 The Japanese Association for Crystal Growth
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