We have successfully grown Ca_8La_2(PO_4)_6O_2 single crystals as a substrate material for GaN epitaxy by the Czochralski technique. Grown Ca_8La_2(PO_4)_6O_2 single crystals showed high lattice matching (approximately 0.36%) and high transparency (from 350nm to 2300nm). Coefficience of thermal expansion was determined by high temperature powder X-ray diffraction method.
