日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
GaN薄膜成長用基板結晶LiGaO_2の育成と評価 : バルク成長II
石井 隆生向田 昌志宮澤 信太郎西原 隆治林 茂樹篠原 真
著者情報
ジャーナル フリー

1998 年 25 巻 3 号 p. A9-

詳細
抄録

We investigated surface atoms of LiGaO_2 (001) substrate with a single domain structure by CAICISS and found that the atoms of easily etched surface are oxygen and those of hardly etched one are metal(Li,Ga). This relationship is well explained by the surface bonding model of ZnO proposed by Mariano. GaN thin film grew only on the metal surface of LiGaO_2 (001) substrate.

著者関連情報
© 1998 日本結晶成長学会
前の記事 次の記事
feedback
Top