Cz法によるGaN用新基板材料Ca_8La_2(PO_4)_6O_2の単結晶作成と格子整合性 : バルク成長II

抄録

We have successfully grown Ca_8La_2(PO_4)_6O_2 single crystals as a substrate material for GaN epitaxy by the Czochralski technique. Grown Ca_8La_2(PO_4)_6O_2 single crystals showed high lattice matching (approximately 0.36%) and high transparency (from 350nm to 2300nm). Coefficience of thermal expansion was determined by high temperature powder X-ray diffraction method.