Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Atomic layer growth of CdTe and ZnTe by Hot-wall epjtaxy
Y. Makino, A. Unno, Y. Nakanishi, H. Tatsuoka, H. Kuwabara
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1998 Volume 25 Issue 3 Pages A22-

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Abstract
We investigated the atomic layer growth of CdTe and ZnTe by Hot-wall epitaxy. Resuled growth rate shows the existence of plateau of 0.5 monolayer/cycle in the substrate temperature range between 260 and 320℃ for CdTe, between 240 and 280℃ for ZnTe.
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© 1998 The Japanese Association for Crystal Growth
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