Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
TEM characterization of MnSi/Si thin films by Mn deposition grown in the presence of an Sb flux.
K Matsuda, Y Matsunaga, K Isaji, H Tatsuoka, H Kuwabara, P D Brown, Y Xin, C J Humphreys
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1998 Volume 25 Issue 3 Pages A21-

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Abstract
MnSi/Si thin films grown in the presence of an Sb flux were charactarized by transmission electron microscopy (TEM). The observation revealed that a high quality epitaxial thin films with smooth interface between MnSi and Si (111) substrate was obtained.
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© 1998 The Japanese Association for Crystal Growth
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