Sb照射下で成長させたMnSi/Si薄膜のTEMによる評価 : 気相成長I

松田 孝司; 松永 和晴; 伊左次 晃司; 立岡 浩一; 桑原 弘; P D Brown; Y Xin; C J Humphreys

doi:10.19009/jjacg.25.3_A21

TEM characterization of MnSi/Si thin films by Mn deposition grown in the presence of an Sb flux.

K Matsuda, Y Matsunaga, K Isaji, H Tatsuoka, H Kuwabara, P D Brown, Y Xin, C J Humphreys

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JOURNAL FREE ACCESS

1998 Volume 25 Issue 3 Pages A21-

DOI https://doi.org/10.19009/jjacg.25.3_A21

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Abstract

MnSi/Si thin films grown in the presence of an Sb flux were charactarized by transmission electron microscopy (TEM). The observation revealed that a high quality epitaxial thin films with smooth interface between MnSi and Si (111) substrate was obtained.

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