1998 年 25 巻 3 号 p. A31-
Chemical species in gas phase for silicon epitaxial growth in SiHCl_3-H_2 system are studied at 973-1273K at 1 atm using quadrupole mass spectroscopy. The dominant silicon species in the exhaust gas out of the horizontal cold-wall single-wafer reactor is observed to be SiHCl_3.