Abstract
We studied selective area growth (SAG) of GaN using tungsten(W) mask. The selectivity of the GaN growth on window regions was excellent. The structures of the GaN depended on the direction of stripe patterns. If the stripe was along the <112^^-0> crystal axis, the triangular structure with {11^^-01} facets was formed. If the stripe was along the <11^^-00> axis, the trapezoidal structure with a smooth (0001) surface on the top and rough surfaces on both sides was obtained. The lateral overgrowth of GaN on the W mask occurred for the both cases.
