Abstract
The effect of hydrogen during the MOVPE growth of group III nitrides is investigated from a thermodynamic point view. The effect of hydrogen is reported for the driving force for the deposition of binary nitrides, AlN, GaN and InN. The effect of hydrogen for the InGaN growth is discussed for the vapor-solid relationship. The difference between the growth reaction of the indium containing nitrides and that of other III-V compounds is also discussed.
