Abstract
In order to investigate the equilibrium segregation coefficient of oxygen concerning Czochralski Si crystal growth, single silicon crystals were grown under an equilibrium condition of Si-Si02-SiO system in a closed silica ampule. The oxygen concentration of the grown silicon crystal was 1.7±0.1(x10^<18> atoms/cm^3), which almost did not depend on the solidification fraction. The equilibrium oxygen segregation coefficient was, then, determined to be about 0.8±0.1
