Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Heat and Mass Transfer in Silicon Drop
S. SakaiX. HuangY. OkanoK. Hoshikawa
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1998 Volume 25 Issue 3 Pages A75-

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Abstract
In order to investigate heat and mass transfer in the silicon sessile drop, numerical simulation has been carried out. In this analysis, the effects of surrounding temperature profile, weight of silicon drop and dissolution profile at silica/melt interface on the convection, temperature profile and oxygen tranportation in the drop were examined.
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© 1998 The Japanese Association for Crystal Growth
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