Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Silicon melt rotation by using electromagnetic force
Masahito WatanabeMinoru EguchiTaketoshi Hibiya
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1998 Volume 25 Issue 3 Pages A78-

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Abstract
When using the Czochralski method for growing large-diameter (>300 mm) silicon crystals, rotation of a large amount silicon melt contained in a crucible is a serious problem. We propose a new method for rotation of the silicon melt. This method uses the electromagnetic force without crucible rotation. The electromagnetic force, (caused by the Lorentz force in the azimuthal direction in the silicon melt) is generated by the interaction between the electric current through the melt (in the radial direction) and the vertical magnetic field generated by external magnetic coils. The rotation rate of the silicon melt changed from 0 to 100 rpm with the change in both the magnetic field strength (0 - 0.1 T) and the electric current in the melt (0 - 8 A).
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© 1998 The Japanese Association for Crystal Growth
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