Abstract
We measured oxygen concentration and its distribution with radial direction in the Si crystals grown by using the electromagnetic CZ (EMCZ) method. Oxygen concentration changed from 1×10^<17> to 8×10^<17> cm^<-3> with changing the magnetic field strength and electrical current in the melt. The radial distribution was more homogeneous than that in crystals grown by the normal MCZ method. This results shows that EMCZ method has the advantage to control the oxygen concentration and its distribution in a large-diameter silicon crystal.
