Abstract
The mechanism of 3C-SiC heteroepitaxial growth on Si(001) substrates has been explored using a hot-wall-type low-pressure reactor, into which SiH_2Cl_2 and C_2H_2 are fed alternately. The growth rate of 3C-SiC was determined from the amount of Si species taken into the surface of the substrate during feeding of SiH_2Cl_2. The grown 3C-SiC film on the Si substrate was found to consist of anti-phase boundaries (APBs) and twins. The annihilation of neighbouring APBS during the SiC growth process brought about a reduction in their densities.
