抄録
Due to the size reduction of advanced ULSIs to subquarter micron level, the influence of grown-in defects appearing in Czochralski-grown silicon (CZ-Si) crystals on the device performance and yield has been widely recognized. Therefore, grown-in defect free crystals are strongly required. In this paper, we will discuss the generation behavior of grown-in defects, based on results obtained up to the present. In addition, we will argue the possibility of grown-in defect free crystals and show that V/G, i.e., the ratio of a growth rate (V) to an axial temperature gradient (G) in the crystals at high temperatures near the melting point, is a key parameter to realize grown-in defect free crystals in the near future which are equivalent to epitaxial wafers in crystal quality.
