日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
シリコンの融解-凝固過程の電子顕微鏡その場観察(<小特集>バルク成長分科会特集 : 結晶の完全性を目指して)
大嶋 隆一郎堀 史説上野 武夫矢口 紀恵
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1998 年 25 巻 5 号 p. 201-206

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The melting and freezing processes of silicon were investigated by in-situ high resolution transmission electron microscopy (HRTEM) and image processing. Atomic structures of (111) interface planes of the solid and liquid phases have been examined. It is revealed that the interface goes back and forth by the lateral motion of atomic steps on (111) planes as the temperature is changed. A transition region of about 1nm thickness is found to exist between the solid and liquid phases.

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© 1998 日本結晶成長学会
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