23aB7 上ソースを用いたSi上のInPマイクロチャンネルエピタキシーの成長条件最適化(エピタキシャル成長II)
1999 年 26 巻 2 号 p. 92-
詳細
1999 年 26 巻 2 号 p. 92-
In InP Microchannel Epitaxy (MCE) by liquid chase epitaxy (LPE), Sn:In=3:l (in weight) solution is used to achieve n-type doping. As the solubility of P in Sn is very high, the growth condition should be optimized by changing the size of the upper crystal. As the result, a wide dislocation-free n-type InP MCE layer, whose width was as large as 210 μn, was obtained on a Si substrate. The optical property of a MQW structure grown on the MCE layer was also excellent.
