Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Structural characterization of ECR-MBE grown GaN layers using hydrogen-nitrogen mixed gas plasma
T. ArakiN. JuuniM. KijimaY. ChibaY. Nanishi
Author information
JOURNAL FREE ACCESS

2000 Volume 27 Issue 1 Pages 21-

Details
Abstract
Structural characterization of GaN grown on GaN templates with a different polar-surface by ECR-MBE using hydrogen-nitrogen mixed gas plasma was carried out. Changes in structure and surface morphology were compared between the GaN grown on N-polar template and those on Ga-polar template.
Content from these authors
© 2000 The Japanese Association for Crystal Growth
Previous article Next article
feedback
Top