Abstract
Tertiarybutylhydrazine(TBHy) is one of the alternative nitrogen sources to ammonia. We investigated growth behavior of gas-source MBE grown GaN epilayers using TBHy by in-situ reflection high-energy electron diffraction (RHEED). It is found that the nitridation of sapphire surface occurred under TBHy irradiation at 900℃ above 10 min. GaN firms with crystal phase of hexagonalcubic GaN (c-GaN) can be obtained, which depended growth conditions.
