Abstract
Decomposition of GaN on its surface was investigated under atnospheric pressure using in situ gravimetric monitoring (GM) method. It was found that the GaN decomposition did not occur with existence NH_3 flow both in the H_2 carrier gas and in the He carrier gas. The decomposition rate is proportional to the P_<H2>^<3/2>. This relation indicates that the decomposition of GaNis, limited by the reaction of GaN(surface) + 3/2H_2(g) → Ga(surface) + NH_3(g).
