Abstract
For the first time, we attempted to grow maskless selective epitaxy (MLSE) of InGaN on GaAs (100), (111)A, (111)B substrates by using a low-energy focused ion beam (LEFIB). Thus, we obtained maskless selective epitaxial films of cubic InGaN/GaAs (100) and hexagonal InGaN/GaAs (111)A. B by using an InGa LEFIB from the InGa liquid alloy ion source and dimethylhydrazine (DMHy) [(CH_3)2N2H2] as Ga and N sources, respectively.
