Characterization of FACELO (Facet Controlled ELO) GaN

Abstract

Characterization of GaN grown by FACELO (Facet Controlled ELO) technique was carried out. Dislocation density of GaN epitaxial layer was reduced to the order of 10^6cm^<-2> via FACELO. It was also found that tilt of c-axis of the FACELO GaN was small. Temperature dependence of PL spectra of the FACELO GaN shows quality of the crystal was fairly good.