Si(001)表面ステップハンチングに及ぼすAs照射の効果とGaAsバッファ層の結晶化過程 : エピタキシャル成長III
2000 年 27 巻 1 号 p. 33-
詳細
2000 年 27 巻 1 号 p. 33-
Dependence of reaction temperature and miscut angles on step bunching upon vicinal Si (001) surfaces after As deposition was studied with STM. The step bunching easily emerges after As deposition and an increase in the miscut angle enhanced it. The crystallization process of GaAs buffer layers on Si substrates was also studied. It was found that the surface steps largely influence the crystallization of the buffer layers.
