Abstract
In_xGa_<1-x>As (x=0.06) epitaxial lateral overgrown (ELO) layers were grown on (111)B GaAs patterned substrates covered with SiN_x mask by LPE. When the layers with {111}A and {111}B growth coalesced, dislocations got generated. For the coalesced ELO layers in constant touch with the basal SiN_x mask, the surface became concave due to thickness decrease of the layers. This problem of thickness decrease was not present when a big enough void structure was present in the grown InGaAS ELO layers.
