Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Study on the LPE growth of InGaAS pyramidal layers on (100) GaAs substrates
K. BalakrishnanS. IidaM. KumagawaY. Hayakawa
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2000 Volume 27 Issue 1 Pages 42-

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Abstract
Growth of In_xGa_<1-x>As (x=0.06) layers with pyramid like structures on various types of patterned (100) GaAs substrates by liquid phase epitaxy (LPE) has been investigated.
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© 2000 The Japanese Association for Crystal Growth
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