抄録
Pure silicon wafers are free of COPs, oxidation induced stacking fault ring, and interstitial silicon dislocation loops. Pure silicon single crystal ingot can be grown with satisfying 0.213<V/G<0.219 mm^2 min^<-1>K^<-1> along radi-al and axial direction of crystal growth using CZ crystal growth method. Nitrogen doping during the crystal growth of pure silicon ingot changes vacancy-rich region to abnormal oxygen precipitate region via the reaction between interstitial nitrogen and vacancy. In addition, nitrogen doping does not change the pull rate margin of pure silicon ingot growth.
