日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
LEC法GaAs結晶の最近の開発動向 : 化合物(<特集>21世紀を担うバルク単結晶)
稲田 知己和地 三千則谷 毅彦小又 慎史大西 正哉水庭 清治
著者情報
ジャーナル フリー

2000 年 27 巻 2 号 p. 41-44

詳細
抄録

The recent development of LEC GaAs crystals has been reviewed, with paying attention on 150 mm large crystals. In order to meet the rapidly increasing demand for larger wafers used for microwave devices, crystals of 150 mm in diameter have been successfully developed and are now being produced industrially. The development of this larger wafer is based on technologies such as multi-zone heater furnace technology, three step annealing and polishing technologies.

著者関連情報
© 2000 日本結晶成長学会
前の記事 次の記事
feedback
Top