抄録
An AlGaN/GaN heterojunction field effect transistor (HFET) was fabricated using a gas-source molecular beam epitaxy (GSMBE). A higher electron mobility (1200cm^2/Vs) was obtained at RT. A selective area growth (SAG) technique was carried out for the formation of a source and drain contacts. As a result, a high power AlGaN/GaN HFET was demonstrated.
