2002 年 29 巻 2 号 p. 39-
We have grown n-type GaInP layers on GaAs substrates by organometallic vapor phase epitaxy using H_2S as a dopant source. We have found a decrease in the GaInP lattice constant with an increasing H_2S supply. The lattice constant of GaInP varied from 5.7009 to 5.6318Å for the H_2S supply from 0 to 1.786μmol/min. The In composition depends greatly on the H_2S supply.