無ネッキング無転位CZ-Si詰晶成長の種子づけ条件の検討 : バルク結晶成長III
2002 年 29 巻 2 号 p. 91-
詳細
2002 年 29 巻 2 号 p. 91-
Seeding condition in dislocation-free CZ-Si crystal growth without necking was investicgated. Si crystals were grown without nechking using heavily B and Ge codoped Si seeds 1/2 inches in diameter under various temperature control. Dislocation-free Si crystals wale obtained when the melt temperature was higher during seeding the diameter immediate under the seeding interface was slightly smaller than the seed. Under this seeding condition, dislocation-free Si crystals 8 inches in diameter could be successfully grown without necking process.
