AlGaN系紫外発光素子における転位密度と発光効率(<小特集>紫外発光材料の現状と将来)

抄録

AlGaN-based UV light emitting diode is fabricated and factors which limits performance of the UV LED is discussed. Microscopic cathodoluminescence suggests that dislocations act as the non-radiative recombination center. For the high-efficiency emission, it is necessary to reduce density of dislocations less than 2×10^7 cm^<-2>.