抄録
Nonstoichiometry of III-V and II-IV compound semiconductors is discussed. 1) Electrical properties, lattice constant and photoluminescence are measured to determine the stoichiometry points of GaAs and GaP and to make clear the nature of nonstoichiometric defects. Importance of interstitial As atoms and defect-impurity complexes are emphasized. 2) Nonstoichiometry of HgTe and Hg_<0.82>Cd_<0.18>Te are investigated. Concentrations of three different kinds of carriers (two kinds of electrons and one hole) are determined by Hall effect measurement via magnetic field. 3) Nearly perfect crystal growth of GaP and GaAs is achieved by liquid phase epitaxy by a temperature difference method under controlled vapor pressure. Stoichiometry can be controlled during crystal growth.
