RFプラズマCVD法におけるa-SiC膜の水素量と成長カイネテイクス(半導体薄膜・表面)
2003 年 30 巻 3 号 p. 15-
詳細
2003 年 30 巻 3 号 p. 15-
The growth kinetics of hydrogenated amorphous silicon carbide films was investigated using the RF plasma CVD system with parallel electrodes. Monometylsilane were used with a hydrogen carrier gas. FTIR of the films revealed quantitatively the hydrogen content. It is conclusive that atomic hydrogen and SiH_2 Serve multiply incorporation of hydrogen to the films.
